The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Nov. 04, 2021
Samsung Display Co., Ltd., Yongin-si, KR;
Kyoungseok Son, Seoul, KR;
Dohyun Kwon, Seongnam-si, KR;
Jonghan Jeong, Yongin-si, KR;
Jonghyun Choi, Seoul, KR;
Eoksu Kim, Seoul, KR;
Jaybum Kim, Seoul, KR;
Junhyung Lim, Seoul, KR;
Jihun Lim, Hwaseong-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;
Abstract
A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.