The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jul. 21, 2021
Applicant:
Sunrise Memory Corporation, San Jose, CA (US);
Inventors:
Vinod Purayath, Sedona, AZ (US);
Yosuke Nosho, Tokyo, JP;
Shohei Kamisaka, Kanagawa, JP;
Michiru Nakane, Tokyo, JP;
Eli Harari, Saratoga, CA (US);
Assignee:
SUNRISE MEMORY CORPORATION, San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H10B 43/27 (2023.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 29/40117 (2019.08); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A process for building a 3-Dimensional NOR memory array avoids the challenge of etching a conductor material that is aimed at providing local word lines at a fine pitch. The process defines the local word lines between isolation shafts that may be carried out at a lower aspect ratio than would be required for etching the conductor material.