The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jul. 07, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyungeun Choi, Suwon-si, KR;
Kiseok Lee, Hwaseong-si, KR;
Seungjae Jung, Suwon-si, KR;
Joongchan Shin, Seoul, KR;
Taehyun An, Seoul, KR;
Moonyoung Jeong, Suwon-si, KR;
Sangyeon Han, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A semiconductor memory device includes: a bit line extending on a substrate in a vertical direction; a transistor body part including a first source-drain region, a monocrystalline channel layer, and a second source-drain region that are sequentially arranged in a first horizontal direction and connected to the bit line; gate electrode layers extending in a second horizontal direction that is orthogonal to the first horizontal direction, with a gate dielectric layer between the gate electrode layers and the monocrystalline channel layer, and covering upper and lower surfaces of the monocrystalline channel layer; and a cell capacitor including a lower electrode layer, a capacitor dielectric layer, and an upper electrode layer at a side of the transistor body that is opposite to the bit line in the first horizontal direction and is connected to the second source-drain region.