The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11750952 B1

Date of Patent:

Sep. 05, 2023

Filed:

Aug. 31, 2022

Imaging element, stacked-type imaging element, and solid-state imaging apparatus

Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yusuke Sato, Kanagawa, JP;

Fumihiko Koga, Kanagawa, JP;

Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;

Attorney:

CHIP LAW GROUP

Primary Examiner:

Albert H Cutler

Int. Cl.

CPC ...

H04N 25/79 (2023.01); H01L 27/146 (2006.01); H04N 23/10 (2023.01); H04N 25/77 (2023.01);

U.S. Cl.

CPC ...

H04N 25/79 (2023.01); H01L 27/14612 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14665 (2013.01); H04N 23/10 (2023.01);

Abstract

There is provided an imaging element includes a photoelectric conversion unit that includes a first electrode, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode that has an opposite region opposite to the first electrode via an insulating layer, and a transfer control electrode that is opposite to the first electrode and the charge storage electrode via the insulating layer, and the photoelectric conversion layer is disposed above at least the charge storage electrode via the insulating layer.

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