The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Jun. 24, 2020
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Maik Andre Scheller, Redmond, WA (US);

Anurag Tyagi, Kirkland, WA (US);

Assignee:

Meta Platforms Technologies, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/06 (2006.01); H01S 5/065 (2006.01); H01S 5/14 (2006.01); H01S 5/42 (2006.01); H01S 5/20 (2006.01); H01S 5/183 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0604 (2013.01); H01S 5/0657 (2013.01); H01S 5/141 (2013.01); H01S 5/1833 (2013.01); H01S 5/18311 (2013.01); H01S 5/18333 (2013.01); H01S 5/18336 (2013.01); H01S 5/2086 (2013.01); H01S 5/423 (2013.01); H01S 5/14 (2013.01); H01S 5/18388 (2013.01); H01S 5/34 (2013.01);
Abstract

A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.


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