The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Nov. 17, 2020
Applicant:

Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;

Inventors:

Tao Hong, Chengdu, CN;

Daping Fu, Chengdu, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/782 (2013.01); H01L 29/0623 (2013.01); H01L 29/0653 (2013.01);
Abstract

A lateral transistor having a well region, a body region, a source region, a drain region, a gate structure and a trenched Schottky barrier structure. The trenched Schottky barrier structure extended vertically from a top surface of the well region through the source region and the body region and penetrated into at least a portion of the well region to form a vertical Schottky contact.


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