The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Apr. 29, 2021
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Ranadeep Dutta, Del Mar, CA (US);
Jonghae Kim, San Diego, CA (US);
Je-Hsiung Lan, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 23/14 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 23/147 (2013.01); H01L 23/49844 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 29/205 (2013.01); H01L 29/66318 (2013.01); H01L 2224/08165 (2013.01); H01L 2224/80001 (2013.01);
Abstract
In an aspect, a heterojunction bipolar transistor (HBT) includes a sub-collector disposed on a collector. The collector has a collector contact disposed on the sub-collector and located on a first side of the heterojunction bipolar transistor. The HBT includes an emitter disposed on an emitter cap. The emitter has an emitter contact disposed on the emitter cap and located on a second side of the heterojunction bipolar transistor. The HBT includes a base having a base contact located on the second side of the heterojunction bipolar transistor.