The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jan. 11, 2021
Nanjing Zizhu Microelectronics Co., Ltd., Nanjing, CN;
Yi Su, Cupertino, CA (US);
Hong Chang, Saratoga, CA (US);
HUAYI MICROELECTRONICS CO., LTD., Xi'an, CN;
Abstract
The present application provides a method for forming a sidewall protection layer in a heavily N-type doped shielding polysilicon for reducing gate to source leakage in a shielded gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET). In the process of forming a shielding polysilicon sidewall is manufactured by using a secondary oxidation layer forming process, so as to increase a thickness of an oxide in a top region of the shielding polysilicon and a thickness of an oxide of a trench sidewall in a transition region between the shielding polysilicon and an N-type doped gate polysilicon to solve the problem of serious gate to source leakage current.