The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jul. 16, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Takuma Suzuki, Himeji Hyogo, JP;
Sozo Kanie, Himeji Hyogo, JP;
Chiharu Ota, Kawasaki Kanagawa, JP;
Susumu Obata, Yokokama Kanagawa, JP;
Kazuhisa Goto, Yokohama Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device of embodiments includes a silicon carbide layer having a first face and a second face, a gate electrode, a gate insulating layer on the first face. The silicon carbide layer includes a first silicon carbide region of a first conductive type; a second silicon carbide region of a second conductive type disposed between the first silicon carbide region and the first face; a third silicon carbide region of a second conductive type between the first silicon carbide region and the first face; a fourth silicon carbide region; a fifth silicon carbide region; a sixth silicon carbide region of a second conductive type between the first silicon carbide region and the first face and between the second silicon carbide region and the third silicon carbide region; and a crystal defect. The crystal defect is in the sixth silicon carbide region.