The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Dec. 20, 2021
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Dan B. Kasha, Seattle, WA (US);

Russell Croman, Buda, TX (US);

Stefan N. Mastovich, Round Rock, TX (US);

Thomas C. Fowler, Georgetown, TX (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 2224/48265 (2013.01); H01L 2924/19104 (2013.01);
Abstract

An integrated circuit has an isolation capacitor structure that reduces the risk of breakdown from high electric fields at the edge of the top metal plate of the capacitor. The capacitor structure includes a bottom metal plate above a substrate. A first dielectric layer of a first dielectric material is formed between the bottom metal plate and the top metal plate. The capacitor structure also includes a thin narrow ring formed of a second dielectric material located under a portion of the top metal plate. The second dielectric material has a higher dielectric constant than the first dielectric material. The thin narrow ring follows the shape of the edge of the top metal plate with a portion of the ring underneath the top metal plate and a portion outside the edge of the top metal plate to thereby be located at a place of the maximum electric field.


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