The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Mar. 16, 2020
Applicants:

Koninklijke Philips N.v., Eindhoven, NL;

Wayne State University, Detriot, MI (US);

Inventors:

Marc Anthony Chappo, Elyria, OH (US);

Stephanie Lee Brock, Ferndale, MI (US);

Assignees:

KONINKLIJKE PHILIPS N.V., Eindhoven, NL;

WAYNE STATE UNIVERSITY, Detroit, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01N 23/046 (2018.01); G01T 1/24 (2006.01); G01T 1/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14676 (2013.01); G01N 23/046 (2013.01); G01T 1/24 (2013.01); G01T 1/2018 (2013.01);
Abstract

A detection layer () for a radiation detector () includes a porous silicon membrane (). The porous silicon membrane includes silicon () with a first side () and a second opposing side (), a plurality of pores () extending entirely through the silicon from the first side to the second opposing side, each including shared walls (), at least one protrusion of silicon () protruding out and extending from the first side a distance (). The porous silicon membrane further includes a plurality of radiation sensitive quantum dots () in the pores and a quantum dot layer disposed on the first side and having a surface () and a thickness (), wherein the thickness is greater than the distance.


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