The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jul. 10, 2022
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Shih-Ping Lee, Hsinchu, TW;
Yi-Ping Lin, Hsinchu County, TW;
Yu-Ching Liao, Hsinchu County, TW;
Ya-Ting Chen, Hsinchu County, TW;
Hsin-Ying Tung, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A method of fabricating a solid-state image sensor, including steps of forming a second type doped semiconductor layer and a semiconductor material layer sequentially on a first type doped semiconductor substrate to constitute a photoelectric conversion portion, forming a multilayer structure on the semiconductor material layer, wherein a refractive index of the multilayer structure gradually decreases from a bottom layer to a top layer of the multilayer structure and is smaller than a refractive index of the semiconductor material layer, and performing a photolithography process to the multiplayer structure and the photoelectric conversion portion to form multiple micro pillars, wherein the micro pillars protrude from the semiconductor material layer and are isolated by recesses extending into the photoelectric conversion portion.