The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Dec. 13, 2021
Quantum Silicon Inc., Edmonton, CA;
The Governors of the University of Alberta, Edmonton, CA;
National Research Council of Canada, Ottawa, CA;
Bruno Vieira Da Cunha Martins, Edmonton, CA;
Robert A. Wolkow, Edmonton, CA;
Marco Taucer, Ottawa, CA;
Jason Pitters, Sherwood Park, CA;
Quantum Silicon Inc., Edmonton, CA;
The Governors of the University of Alberta, Edmonton, CA;
National Research Council of Canada, Ottawa, CA;
Abstract
A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.