The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Aug. 26, 2022
Texas Tech University System, Lubbock, TX (US);
Hongxing Jiang, Lubbock, TX (US);
Changzhi Li, Lubbock, TX (US);
Jing Li, Lubbock, TX (US);
Jingyu Lin, Lubbock, TX (US);
Texas Tech University System, Lubbock, TX (US);
Abstract
Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich InGaN/GaN multiple quantum wells (MQWs). In-rich InGaN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.