The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Dec. 10, 2021
Sinoma Synthetic Crystals Co., Ltd., Beijing, CN;
Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing, CN;
Xun Qian, Beijing, CN;
Cunxin Huang, Beijing, CN;
Hongtao Xiao, Beijing, CN;
Xu Zhang, Beijing, CN;
Kehong Zhang, Beijing, CN;
Sinoma Synthetic Crystals Co., Ltd., Beijing, CN;
Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing, CN;
Abstract
The present invention provides an optical ZnS material and a preparation method thereof, wherein the preparation method comprises: charging zinc and sulfur into a first crucible and a feeding device of a chemical vapor deposition furnace, respectively; heating the first crucible, the second crucible and a deposition chamber, and charging sulfur into the second crucible through the feeding device; introducing an inert carrier gas into the first crucible, and introducing an inert carrier gas and hydrogen into the second crucible, flowing the carrier gas containing zinc vapor and sulfur vapor respectively into the deposition chamber through pipelines to deposit ZnS, and supplying the second crucible with sulfur regularly and quantitatively through the feeding device during the deposition process to maintain a saturated vapor pressure of sulfur in a range of 0.8 to 1.8 KPa. The preparation method of the present invention does not generate HS; thus it can avoid the formation of hydrogen-zinc complexes by H ions produced from the decomposition of HS and Zn vapor, which would otherwise affect the transmittance and emissivity of ZnS material.