The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jan. 06, 2020
Applicant:
Soulbrain Co., Ltd., Seongnam-si, KR;
Inventors:
Changbong Yeon, Seongnam-si, KR;
Jaesun Jung, Seongnam-si, KR;
Hyeran Byun, Seongnam-si, KR;
Taeho Song, Seongnam-si, KR;
Sojung Kim, Seongnam-si, KR;
Seokjong Lee, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 16/303 (2013.01); C23C 16/34 (2013.01); C23C 16/405 (2013.01); C23C 16/45534 (2013.01); C23C 16/45544 (2013.01); H01L 21/28568 (2013.01); H01L 21/76841 (2013.01);
Abstract
The present invention relates to a method for forming a thin film, and more particularly, to a method for forming a thin film comprising steps of: According to the present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film, even when the thin film is formed on a substrate having a complex structure.