The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Dec. 04, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hyunki Kim, Suwon-si, KR;
Shin Ae Jun, Seongnam-si, KR;
Eun Joo Jang, Suwon-si, KR;
Yongwook Kim, Hwaseong-si, KR;
Tae Gon Kim, Hwaseong-si, KR;
Yuho Won, Seoul, KR;
Taekhoon Kim, Hwaseong-si, KR;
Hyo Sook Jang, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 11/61 (2006.01); C09K 11/72 (2006.01); C09K 11/70 (2006.01); C09K 11/56 (2006.01); C09K 11/62 (2006.01); C09K 11/88 (2006.01); H01L 33/50 (2010.01); H01L 29/06 (2006.01); H01L 29/22 (2006.01); C09K 11/02 (2006.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/883 (2013.01); C09K 11/025 (2013.01); C09K 11/565 (2013.01); C09K 11/61 (2013.01); C09K 11/612 (2013.01); C09K 11/70 (2013.01); C09K 11/705 (2013.01); C09K 11/72 (2013.01); C09K 11/722 (2013.01); C09K 11/88 (2013.01); H01L 29/0665 (2013.01); H01L 29/22 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 33/502 (2013.01); Y10S 977/774 (2013.01); Y10S 977/818 (2013.01); Y10S 977/824 (2013.01); Y10S 977/825 (2013.01); Y10S 977/892 (2013.01); Y10S 977/896 (2013.01); Y10S 977/95 (2013.01);
Abstract
A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.