The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Jun. 19, 2020
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Robertus Petrus Van Kampen, Hertogenbosch, NL;

Lance Barron, Plano, TX (US);

Richard L. Knipe, McKinney, TX (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0067 (2013.01); B81C 1/00349 (2013.01); B81C 1/00444 (2013.01); B81B 2207/11 (2013.01); B81C 1/00158 (2013.01);
Abstract

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.


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