The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Feb. 25, 2015
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Tomohito Kawashima, Yokohama, JP;

Takahiro Nonaka, Yokkaichi, JP;

Yusuke Arayashiki, Yokkaichi, JP;

Takayuki Ishikawa, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02); H10N 70/245 (2023.02); H10N 70/841 (2023.02); H10N 70/8416 (2023.02); H10N 70/8833 (2023.02); H10B 63/84 (2023.02);
Abstract

According to one embodiment, a resistive random access memory device includes a first electrode and a second electrode. The resistive random access memory device also includes a resistance change layer connected between the first electrode and the second electrode. The resistive random access memory device also includes a conductive layer connected in series to the resistance change layer between the first electrode and the second electrode. The resistive random access memory device in which the conductive layer includes a plurality of first material layers including a first material and a plurality of second material layers including a second material which is different from the first material.


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