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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11744158 B1

PDFFull Text
Date of Patent:
Aug. 29, 2023

Filed:

Sep. 10, 2020

Ferroelectric material, mems component comprising a ferroelectric material, mems device comprising a first mems component, method of producing a mems component, and method of producing a cmos-compatible mems component

Applicants:

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;

Christian-albrechts-universitaet Zu Kiel, Kiel, DE;

Inventors:

Bernhard Wagner, Itzehoe, DE;

Fabian Lofink, Itzehoe, DE;

Dirk Kaden, Itzehoe, DE;

Simon Fichtner, Itzehoe, DE;

Assignees:

Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V., Munich, DE;

Christian-Albrechts-Universitaet zu Kiel, Kiel, DE;

Attorneys:

Perkins Coie LLP

Michael A. Glenn

Primary Examiner:

Bryan P Gordon

Int. Cl.
CPC ...
H01L 41/187 (2006.01); H10N 30/853 (2023.01); B81B 7/02 (2006.01); H10N 30/045 (2023.01); H10N 30/50 (2023.01); H10N 30/00 (2023.01); H10N 30/20 (2023.01);
U.S. Cl.
CPC ...
H10N 30/853 (2023.02); B81B 7/02 (2013.01); H10N 30/045 (2023.02); H10N 30/1051 (2023.02); H10N 30/2042 (2023.02); H10N 30/50 (2023.02); B81B 2201/03 (2013.01);
Abstract

A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

Find Patent Forward Citations

Wagner, Bernhard. (2023). Ferroelectric material, mems component comprising a ferroelectric material, mems device comprising a first mems component, method of producing a mems component, and method of producing a cmos-compatible mems component (U.S. Patent No. 11744158). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11744158

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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