The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Sep. 27, 2019
Applicant:

Tcl Technology Group Corporation, Huizhou, CN;

Inventors:

Zhurong Liang, Huizhou, CN;

Weiran Cao, Huizhou, CN;

Lei Qian, Huizhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H10K 50/155 (2023.01); C08K 3/16 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01); H10K 50/115 (2023.01); H10K 50/165 (2023.01); H10K 71/00 (2023.01); H10K 85/10 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/155 (2023.02); C08K 3/16 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); H10K 50/115 (2023.02); H10K 50/165 (2023.02); H10K 71/00 (2023.02); C08K 2201/001 (2013.01); H10K 85/141 (2023.02); H10K 2102/351 (2023.02);
Abstract

The present disclosure discloses a quantum dot light-emitting diode and a preparation method therefor, wherein the quantum dot light-emitting diode comprises an anode, a cathode, and a quantum dot light-emitting layer disposed between the anode and the cathode, further includes a first modified layer disposed between the anode and the quantum dot light-emitting layer, comprising PAMAM having transition metal cation doped. The present disclosure, by disposing the first modified layer between the anode and the quantum dot light-emitting layer to modify the anode, is able to increase work function of anode, thereby improving hole injection effect and performance of a device. The present disclosure, by disposing a second modified layer between the cathode and the quantum dot light-emitting layer to modify the cathode and reduce the work function of the cathode, thereby improves electron injection effect and performance of the device.


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