The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Jul. 16, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Yusuke Sato, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H10K 39/32 (2023.01); H04N 25/79 (2023.01); H10K 19/20 (2023.01); H10K 30/30 (2023.01); H10K 30/82 (2023.01); H04N 23/10 (2023.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H04N 25/79 (2023.01); H10K 19/20 (2023.02); H10K 30/30 (2023.02); H10K 30/82 (2023.02); H01L 27/14647 (2013.01); H04N 23/10 (2023.01);
Abstract

A solid-state image sensor includes a plurality of imaging element blocks each configured from a plurality of imaging elements. Each of the imaging elements includes a first electrode, a charge accumulating electrode arranged in a spaced relation from the first electrode, a photoelectric conversion portion contacting with the first electrode and formed above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion portion. The first electrode and the charge accumulating electrode are provided on an interlayer insulating layer, and the first electrode is connected to a connection portion provided in the interlayer insulating layer.


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