The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Oct. 31, 2018
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Toshiki Moriwaki, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 39/32 (2023.01); H01L 27/146 (2006.01); H04N 25/79 (2023.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H01L 27/14647 (2013.01); H04N 25/79 (2023.01);
Abstract
An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.