The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Oct. 06, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Ryu Ogiwara, Yokohama Kanagawa, JP;

Daisaburo Takashima, Yokohama Kanagawa, JP;

Takahiko Iizuka, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); H10B 63/34 (2023.02); H10N 70/231 (2023.02); H10N 70/8828 (2023.02); G11C 2213/71 (2013.01); G11C 2213/79 (2013.01);
Abstract

According to one embodiment, a memory device includes: a first variable resistance layer; first and second semiconductor layers being in contact with the first variable resistance layer; a first word line; a second word line being adjacent to the first word line; and a third word line being adjacent to the first and second word lines with the first semiconductor layer, the first variable resistance layer, and the second semiconductor layer interposed therebetween, and provided between the first word line and the second word line. In the first variable resistance layer, a first region including a shortest path connecting the first word line and the third word line functions as a first memory cell, and a second region including a shortest path connecting the third word line and the second word line functions as a second memory cell.


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