The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Mar. 05, 2019
Rf360 Europe Gmbh, Munich, DE;
Maximilian Schiek, Puchheim, DE;
Roland Rosezin, Bernau am Chiemsee, DE;
Willi Aigner, Moosinning, DE;
Thomas Mittermaier, Schwindegg, DE;
Edgar Schmidhammer, Stein an der Traun, DE;
Stephane Chamaly, Mouans-Sartoux, FR;
Xavier Perois, Mouans-Sartoux, FR;
Christian Huck, Munich, DE;
Alexandre Augusto Shirakawa, San Diego, CA (US);
RF360 Singapore, San Diego, CA (US);
Abstract
A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.