The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Jul. 26, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jeehwan Kim, Los Angeles, CA (US);

Ning Li, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Brent A. Wacaser, Putnam Valley, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2021.01); H01S 3/0933 (2006.01); H01S 5/04 (2006.01); H01S 5/30 (2006.01); H01S 5/11 (2021.01); H01S 5/026 (2006.01); H01L 33/58 (2010.01);
U.S. Cl.
CPC ...
H01S 5/1042 (2013.01); H01S 3/0933 (2013.01); H01S 5/041 (2013.01); H01S 5/1067 (2013.01); H01S 5/11 (2021.01); H01S 5/30 (2013.01); H01L 33/58 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0083 (2013.01); H01S 5/026 (2013.01);
Abstract

A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.


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