The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Sep. 29, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Donggun Lee, Hwaseong-si, KR;

Gibum Kim, Yongin-si, KR;

Joosung Kim, Seongnam-si, KR;

Juhyun Kim, Seoul, KR;

Tan Sakong, Seoul, KR;

Jonguk Seo, Hwaseong-si, KR;

Youngjo Tak, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/48 (2010.01); H01L 33/54 (2010.01); H01L 33/52 (2010.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/382 (2013.01); H01L 33/486 (2013.01); H01L 33/54 (2013.01);
Abstract

A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.


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