The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Jul. 08, 2022
Applicant:

Nuvoton Technology Corporation Japan, Kyoto, JP;

Inventors:

Masanori Hiroki, Shiga, JP;

Shigeo Hayashi, Kyoto, JP;

Kenji Nakashima, Toyama, JP;

Toshiya Fukuhisa, Osaka, JP;

Keimei Masamoto, Niigata, JP;

Atsushi Yamada, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/48 (2010.01); B23K 20/10 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/486 (2013.01); B23K 20/10 (2013.01); H01L 33/0095 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/62 (2013.01);
Abstract

A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.


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