The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Nov. 24, 2020
Applicant:

Cisco Technology, Inc., San Jose, CA (US);

Inventors:

Xunyuan Zhang, Mechanicsburg, PA (US);

Li Li, San Ramon, CA (US);

Prakash B. Gothoskar, Allentown, PA (US);

Soha Namnabat, Breinigsville, PA (US);

Assignee:

Cisco Technology, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0368 (2006.01); H01L 31/105 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1812 (2013.01); H01L 31/036 (2013.01); H01L 31/03682 (2013.01); H01L 31/105 (2013.01); H01L 31/1808 (2013.01); H01L 31/1892 (2013.01);
Abstract

The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.


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