The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Feb. 12, 2019
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Hiroyuki Otsuka, Karuizawa-machi, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
A method for manufacturing a solar cell having a P-type silicon substrate wherein one main surface is a light-receiving surface and another is a backside, a plurality of back surface electrodes formed on a part of the backside, an N-type layer in at least a part of the light-receiving surface, and contact areas in which the substrate contacts the electrodes; wherein the P-type silicon substrate is a silicon substrate doped with gallium and has a resistivity of 2.5 Ω·cm or less; and a back surface electrode pitch P[mm] of contact areas in which the P-type silicon substrate is in contact with the back surface electrodes and the resistivity R[Ω·cm] of the substrate satisfy the relation represented by the following formula (1).log()≤−log()+1.0  (1)