The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Aug. 24, 2022
Applicant:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Inventors:
Assignee:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/788 (2006.01); G06N 3/063 (2023.01); H01L 29/423 (2006.01); H01L 29/86 (2006.01); H10B 41/10 (2023.01); H10B 41/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); G06N 3/063 (2013.01); H01L 29/42324 (2013.01); H01L 29/86 (2013.01); H10B 41/10 (2023.02); H10B 41/30 (2023.02);
Abstract
Disclosed is a floating gate memristor device comprising: a substrate; a floating gate disposed on the substrate; an insulating layer covering the floating gate; a first electrode including a plurality of control terminals disposed on the insulating layer and spaced apart from each other, wherein the plurality of control terminals vertically overlap the floating gate; a second electrode spaced away from the first electrode, wherein a ground voltage is applied to the second electrode; and a third electrode disposed on the substrate and electrically connected to the floating gate.