The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Mar. 03, 2021
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Atsushi Yoshitomi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/66833 (2013.01); H10B 43/35 (2023.02);
Abstract

Reliability and performance of a semiconductor device are improved. First, a first mask pattern is formed on the semiconductor substrate in each of first to third regions. Next, a second mask pattern made of a material that is different from a material configuring the first mask pattern is formed on a side surface of the first mask pattern and on the semiconductor substrate in each of the first to third regions. Next, by an anisotropic etching process performed to the semiconductor substrate, a plurality of fins protruding from the recessed upper surface of the semiconductor substrate are formed. In the manner, fins each having a different structure from that of a fin in the first region can be formed in the second and third regions.


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