The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Dec. 08, 2021
Industrial Technology Research Institute, Hsinchu, TW;
Hsueh-Hsing Liu, Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
Provided are a semiconductor substrate and a transistor. The semiconductor substrate includes a base, an insulating layer, a semiconductor layer, a wide bandgap diffusion buffer layer and a nucleation layer. The insulating layer is disposed on the base. The semiconductor layer is disposed on the insulating layer. The wide bandgap diffusion buffer layer is disposed on the semiconductor layer, wherein the bandgap of the wide bandgap buffer diffusion layer is higher than 2.5 eV. The nucleation layer is disposed on the wide bandgap diffusion buffer layer, wherein the nucleation layer includes an aluminum-containing layer.