The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Oct. 22, 2019
Applicant:

Ensurge Micropower Asa, San Jose, CA (US);

Inventors:

Raghav Sreenivasan, Fremont, CA (US);

Aditi Chandra, Los Gatos, CA (US);

Yoocharn Jeon, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1262 (2013.01); H01L 27/1218 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01);
Abstract

The present disclosure pertains to a barrier stack for thin film and/or printed electronics on substrates having a diffusible element and/or species, methods of manufacturing the same, and methods of inhibiting or preventing diffusion of a diffusible element or species in a substrate using the same. The barrier stack includes a first barrier layer on the substrate, an insulator layer on the first barrier layer, a second barrier layer on the insulator layer in a first region of the substrate, and a third barrier layer on the insulator layer in a second region of the substrate and on the second barrier layer in the first region. Each of the second and third barrier layers has a thickness less than that of the first barrier layer.


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