The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Nov. 04, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Jung Ho Do, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 27/0922 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

Integrated circuit devices including standard cells are provided. The integrated devices may include a lower transistor region and an upper transistor region. The lower transistor region may include a lower active region, lower source/drain regions, and lower gate structures arranged alternately with the lower source/drain regions. The upper transistor region may include an upper active region, upper source/drain regions, and upper gate structures arranged alternately with the upper source/drain regions. The upper gate structures may include a first upper gate structure. The integrated devices may also include an input wire, an input via electrically connecting the input wire to the first upper gate structure, and a routing wire electrically connecting a pair of the lower source/drain regions or a pair of the upper source/drain regions. An upper surface of the routing wire may be closer to the substrate than an upper surface of the input wire.


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