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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11742249 B1

PDFFull Text
Date of Patent:
Aug. 29, 2023

Filed:

Sep. 05, 2022

Semiconductor device and fabrication method for semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Motoyoshi Kubouchi, Matsumoto, JP;

Kosuke Yoshida, Matsumoto, JP;

Soichi Yoshida, Matsumoto, JP;

Koh Yoshikawa, Matsumoto, JP;

Nao Suganuma, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01L 21/22 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 21/324 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 21/221 (2013.01); H01L 21/265 (2013.01); H01L 21/26526 (2013.01); H01L 21/324 (2013.01); H01L 27/0664 (2013.01); H01L 29/0611 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/407 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01);
Abstract

A fabrication method for a semiconductor device includes measuring a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed, adjusting an implantation condition in accordance with the thickness of the semiconductor substrate and implanting hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate, and annealing the semiconductor substrate and forming, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor.

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