The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Feb. 27, 2017
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Junya Sasaki, Tokyo, JP;

Masahiro Sumiya, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/3213 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); C23C 16/4405 (2013.01); C23C 16/463 (2013.01); C23C 16/50 (2013.01); H01J 37/32862 (2013.01); H01L 21/02071 (2013.01); H01L 21/67023 (2013.01); H01L 21/67069 (2013.01);
Abstract

The present invention provides a plasma processing method for subjecting a sample on which a metal element-containing film is disposed to plasma etching in a processing chamber. The method comprises: subjecting an inside of the processing chamber to plasma cleaning using a boron element-containing gas; removing the boron element using plasma after the plasma cleaning; subjecting the inside of the processing chamber to plasma cleaning using a fluorine element-containing gas after removing the boron element; depositing a deposited film in the processing chamber by plasma using a silicon element-containing gas after the plasma cleaning using the fluorine element-containing gas; and subjecting the sample to plasma etching after depositing the deposited film.


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