The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Feb. 26, 2020
Applicant:
The Hong Kong University of Science and Technology, Hong Kong, CN;
Inventors:
Kei May Lau, Hong Kong, CN;
Yu Han, Hong Kong, CN;
Assignee:
The Hong Kong University of Science and Technology, Hong Kong, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/02 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01); G02B 6/13 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02645 (2013.01); G02B 6/12004 (2013.01); G02B 6/131 (2013.01); G02B 6/136 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); G02B 2006/12061 (2013.01); H01L 21/30608 (2013.01);
Abstract
The present disclosure relates to a method for growing III-V compound semiconductors on silicon-on-insulators. Starting from {111}-oriented Si seed surfaces between a buried oxide layer and a patterned mask layer, the III-V compound semiconductor is grown within lateral trenches by metal organic chemical vapor deposition such that the non-defective portion of the III-V compound semiconductor formed on the buried oxide layer is substantially free of crystalline defects and has high crystalline quality.