The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Aug. 30, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Masahiko Nakayama, Kuwana Mie, JP;

Kazumasa Sunouchi, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/003 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01);
Abstract

A storage device includes a memory cell array in which a plurality of memory cells respectively including a variable resistance memory element are divided into a plurality of memory blocks, the plurality of memory cells including a first memory cell and a second memory cell that are in the same memory block, and a detection circuit. During a read operation in which the first memory cell is a read target, the detection circuit compares a first resistance value, which is a resistance value of the variable resistance memory element in the first memory cell, with a second resistance value, which is a resistance value of the variable resistance memory element in the second memory cell, and determines a value of data stored in the first memory cell based on whether or not the first resistance value is higher or lower than the second resistance value.


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