The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Aug. 11, 2021
The Regents of the University of California, Oakland, CA (US);
Sayeef Salahuddin, Walnut Creek, CA (US);
Shehrin Sayed, Berkeley, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
The present disclosure relates to a magnetic memory structure with a voltage-controlled gain-cell configuration, which includes a memory resistive device, a first transistor connected in series with the memory resistive device, and a second transistor. The memory resistive device has a baseline resistance larger than 10 MΩ, and is eligible to exhibit a '1' state and a '0' state and exhibit a resistance change between the ‘1’ state and the ‘0’ state. The second transistor has a gate connected to a connection node of the first transistor and the memory resistive device. When the memory resistive device exhibits the ‘1’ state, a gate voltage for the second transistor is smaller than a threshold voltage of the second transistor, and when the memory resistive device exhibits the ‘0’ state, the gate voltage for the second transistor is larger than the threshold voltage of the second transistor.