The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Nov. 24, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sanghun Kim, Seoul, KR;
Joobyoung Kim, San Jose, CA (US);
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 30/30 (2020.01); G03F 1/36 (2012.01); G03F 7/00 (2006.01); G06F 30/398 (2020.01); G06F 119/18 (2020.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G03F 7/70441 (2013.01); G06F 30/398 (2020.01); G06F 2119/18 (2020.01);
Abstract
A method of manufacturing a lithographic mask includes performing optical proximity correction (OPC) for correcting an optical proximity effect (OPE) on a design layout, and forming a lithographic mask based on the design layout corrected by performing the OPC, wherein performing the OPC includes generating a plurality of segments. and adjusting a bias of the plurality of segments, and the plurality of dissection positions include global uniform dissection positions defined for each third length based on a global coordinate system that is a coordinate system of the whole design layout.