The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Feb. 23, 2022
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Yohei Sugimoto, Fujimi-Machi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1343 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); G02F 1/136213 (2013.01); H01L 27/1222 (2013.01); H01L 27/1244 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); H01L 29/78675 (2013.01);
Abstract

Provided are a scanning line extending along a first direction, a data line extending along a second direction intersecting the first direction, a TFT having a semiconductor layer including one source drain region and a channel region extending along the first direction, at a position overlapping the scanning line in plan view, and another source drain region extending along the second direction, at a position overlapping the data line in plan view, and a first capacitance element and a second capacitance element disposed at a position overlapping the data line, and the first capacitance element and the second capacitance element are configured to include a part of the semiconductor layer.


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