The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Aug. 31, 2021
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Seoul National University R&db Foundation, Seoul, KR;

Inventors:

Jooho Kim, Seoul, KR;

Donyun Kim, Seoul, KR;

Yunhyoung Nam, Seoul, KR;

Seungjin Lee, Yongin-Si, KR;

Dawoon Choi, Hwaseong-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/24 (2006.01); H01J 37/28 (2006.01); G06T 7/60 (2017.01); G06V 10/26 (2022.01);
U.S. Cl.
CPC ...
G01B 11/24 (2013.01); G06T 7/60 (2013.01); G06V 10/267 (2022.01); H01J 37/28 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/2803 (2013.01);
Abstract

A method of measuring a critical dimension (CD) includes forming a plurality of patterns in a substrate, creating first to n-th images, where n is a natural number greater than 1, for first to n-th areas in the substrate, respectively, where the first to n-th areas do not overlap with each other, where each of the first to n-th areas comprising at least some of the plurality of patterns, creating a merged image for the first to n-th images, and measuring a CD for a measurement object from the plurality of patterns using the merged image. The merged image has a higher resolution than each of the first to n-th images.


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