The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Jul. 26, 2021
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Hao-Wu Lin, Hsinchu, TW;

Ho-Hsiu Chou, Hsinchu, TW;

Chih-Li Chang, Hsinchu, TW;

Chien-Yu Chen, Hsinchu, TW;

Lin Yang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/06 (2006.01); H10K 85/30 (2023.01); C07F 7/24 (2006.01); H01S 3/16 (2006.01); H10K 50/135 (2023.01);
U.S. Cl.
CPC ...
H10K 85/30 (2023.02); C07F 7/24 (2013.01); C09K 11/06 (2013.01); C09K 2211/1007 (2013.01); H01S 3/1675 (2013.01); H10K 50/135 (2023.02);
Abstract

A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film. Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.


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