Semiconductor storage device, manufacturing method of semiconductor storage device, and electronic device

Abstract

A semiconductor storage device and an electronic device that include a ferroelectric capacitor having a more optimized structure, as a memory cell are provided. A semiconductor storage device includes a field-effect transistor provided in an active region of a semiconductor substrate, a ferroelectric capacitor including a first capacitor electrode and a second capacitor electrode sandwiching a ferroelectric film, the first capacitor electrode being electrically connected to one of a source or a drain of the field-effect transistor, a source line electrically connected to the second capacitor electrode of the ferroelectric capacitor, and a bit line electrically connected to another one of the source or the drain of the field-effect transistor, in which a gate electrode of the field-effect transistor extends in a first direction across the active region, and the source line and the bit line extend in a second direction orthogonal to the first direction.