The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Aug. 14, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Tae-Hong Kwon, Seoul, KR;
Chan Ho Kim, Seoul, KR;
Kyung Hwa Yun, Hwaseong-si, KR;
Dae Seok Byeon, Seongnam-si, KR;
Chi Weon Yoon, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 16/32 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 5/14 (2006.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 5/145 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/32 (2013.01); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract
In order to permit dense integration of a high number of stacked word lines in the semiconductor memory device, a charge pump is included in the semiconductor memory device. The charge pump makes use of a capacitor. The capacitor is implemented with respect to the dense integration. Some components are placed under the stacked word lines, and some are not under the stacked word lines. The capacity of the capacitor not under the stacked word lines is provided in part by a parallel structure.