The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Feb. 28, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Takamasa Ito, Nagoya Aichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 5/06 (2006.01); G11C 5/02 (2006.01); H01L 21/02 (2006.01); H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/50 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 21/0223 (2013.01); H01L 21/02236 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/50 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor storage device includes a substrate, a first conductor layer, a plurality of second conductor layers, and a first contact. The substrate includes a core region, a first region surrounding the core region, and a second region connecting the core region and the first region. The first conductor layer is above the core region, the first region, and the second region. The second conductor layers are above the first conductor layer above the core region. The first contact is above the first region and extends in the thickness direction. The first contact separates the first conductor layer above the first region into a first portion surrounded by the first contact and a second portion surrounding the first contact. The first portion of the first conductor layer includes a first oxidized portion, and the second portion of the first conductor layer includes a second oxidized portion.


Find Patent Forward Citations

Loading…