The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Dec. 16, 2020
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Carole Pernel, Grenoble, FR;
Amélie Dussaigne, Grenoble, FR;
Abstract
A method for manufacturing a substrate comprising the following steps of: providing a stack comprising an initial substrate, a GaN layer, a doped InGaN layer and an unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to an anodising support, so as to form a second stack, dipping the second stack and the counter-electrode into an electrolyte solution, and applying a voltage or current between the doped InGaN layer and a counter electrode, to porosify the doped InGaN layer, and relaxing the unintentionally doped InGaN layer, transferring the doped InGaN layer and the unintentionally doped InGaN layer to a support of interest, forming an InGaN layer by epitaxy on the unintentionally doped InGaN layer, whereby a relaxed epitaxially grown InGaN layer is obtained.