The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Jul. 26, 2021
Applicant:
Soitec, Bernin, FR;
Inventor:
David Sotta, Grenoble, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 21/324 (2006.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 21/02002 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/3245 (2013.01); H01L 33/0075 (2013.01); H01L 33/12 (2013.01);
Abstract
A method for preparing a crystalline semiconductor layer in order for the layer to be provided with a specific lattice parameter involves a relaxation procedure that is applied for a first time to a first start donor substrate in order to obtain a second donor substrate. Using the second donor substrate as the start donor substrate, the relaxation procedure is repeated for a number of times that is sufficient for the lattice parameter of the relaxed layer to be provided with the specific lattice parameter. A set of substrates may be obtained by the method.