The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

May. 29, 2019
Applicant:

Rockley Photonics Limited, Altrincham, GB;

Inventors:

Yi Zhang, Pasadena, CA (US);

Hooman Abediasl, Pasadena, CA (US);

Aaron John Zilkie, Pasadena, CA (US);

Assignee:

Rockley Photonics Limited, Altrincham, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1013 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/1804 (2013.01); H01L 31/105 (2013.01);
Abstract

A silicon based photodetector and method of manufacturing the same are provided. The photodetector comprising: a silicon substrate; a buried oxide layer, above the silicon substrate; and a waveguide, above the buried oxide layer. The waveguide includes a silicon, Si, containing region and a germanium tin, GeSn, containing region, both located between a first doped region and a second doped region of the waveguide, thereby forming a PIN diode. The first doped region and the second doped region are respectively connected to first and second electrodes, such that the waveguide is operable as a photodetector.


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